2 inch SiC Wafers 6H or 4H Semi-Insulating SiC Substrates Dia50.8mm

Silicon carbide substrate can be divided into conductive type and semi-insulating type according to resistivity. Conductive silicon carbide devices are mainly used in electric vehicles, photovoltaic power generation, rail transit, data centers, charging and other infrastructure. The electric vehicle industry has a huge demand for conductive silicon carbide substrates, and at present, Tesla, BYD, NIO, Xiaopeng and other new energy vehicle companies have planned to use silicon carbide discrete devices or modules.

Semi-insulated silicon carbide devices are mainly used in 5G communications, vehicle communications, national defense applications, data transmission, aerospace and other fields. By growing the gallium nitride epitaxial layer on the semi-insulated silicon carbide substrate, the silicon-based gallium nitride epitaxial wafer can be further made into microwave RF devices, which are mainly used in the RF field, such as power amplifiers in 5G communication and radio detectors in national defense.

The manufacturing of silicon carbide substrate products involves equipment development, raw material synthesis, crystal growth, crystal cutting, wafer processing, cleaning and testing, and many other links. In terms of raw materials, Songshan Boron industry provides silicon carbide raw materials for the market, and has achieved small batch sales. The third generation semiconductor materials represented by silicon carbide play a key role in modern industry, with the acceleration of penetration of new energy vehicles and photovoltaic applications, the demand for silicon carbide substrate is about to usher in an inflection point.