200mm SiC substrate dummy grade 4H-N 8inch SiC wafer
The technical difficulties of 8-inch SiC substrate production include:
1.Crystal Growth: Achieving high-quality single crystal growth of silicon carbide in large diameters can be challenging due to the control of defects and impurities.
2.Wafer Processing: The larger size of 8-inch wafers presents challenges in terms of uniformity and defect control during wafer processing, such as polishing, etching, and doping.
3.Material Homogeneity: Ensuring consistent material properties and homogeneity across the entire 8-inch SiC substrate is technically demanding and requires precise control during the manufacturing process.
4.Cost: Scaling up to 8-inch SiC substrates while maintaining high material quality and yield can be economically challenging due to the complexity and cost of the production processes.
5.Addressing these technical difficulties is crucial for the widespread adoption of 8-inch SiC substrates in high-performance power and optoelectronic devices.
We supply sapphire substrates from China's number one export SiC factories including Tankeblue. More than 10 years of agency has allowed us to maintain a close relationship with the factory. We can provide you with the 6inch and 8inchSiC substrates you need for a long term and stable supply while offering the best price and price.
Tankeblue is a high-tech enterprise specializing in the development, production and sales of third-generation semiconductor silicon carbide (SiC) chips. The company is one of the world's leading producers of SiC wafers.