2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade

The 6H n-type Silicon Carbide (SiC) single-crystal substrate is an essential semiconductor material extensively used in high-power, high-frequency, and high-temperature electronic applications. Renowned for its hexagonal crystal structure, 6H-N SiC offers a wide bandgap and high thermal conductivity, making it ideal for demanding environments.
This material’s high breakdown electric field and electron mobility enable the development of efficient power electronic devices, such as MOSFETs and IGBTs, that can operate at higher voltages and temperatures than those made from traditional silicon. Its excellent thermal conductivity ensures effective heat dissipation, critical for maintaining performance and reliability in high-power applications.
In radiofrequency (RF) applications, 6H-N SiC’s properties support the creation of devices capable of operating at higher frequencies with improved efficiency. Its chemical stability and resistance to radiation also make it suitable for use in harsh environments, including aerospace and defense sectors.
Furthermore, 6H-N SiC substrates are integral to optoelectronic devices, such as ultraviolet photodetectors, where their wide bandgap allows for efficient UV light detection. The combination of these properties makes 6H n-type SiC a versatile and indispensable material in advancing modern electronic and optoelectronic technologies.