3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-insulting SiC wafers

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High quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry. 3inch SiC wafer is a next generation semiconductor material ,semi-insulating silicon-carbide wafers of 3-inch diameter. The wafers are intended for the fabrication of power, RF and optoelectronics devices.

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3-inch 4H semi-insulated SiC (silicon carbide) substrate wafers are a commonly used semiconductor material. 4H indicates a tetrahexahedral crystal structure. Semi-insulation means that the substrate has high resistance characteristics and can be somewhat isolated from current flow.

Such substrate wafers have the following characteristics: high thermal conductivity, low conduction loss, excellent high temperature resistance, and excellent mechanical and chemical stability. Because silicon carbide has a wide energy gap and can withstand high temperatures and high electric field conditions, 4H-SiC semi-insulated wafers are widely used in power electronics and radio frequency (RF) devices.

The main applications of 4H-SiC semi-insulated wafers include:

1--Power electronics: 4H-SiC wafers can be used to manufacture power switching devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) and Schottky diodes. These devices have lower conduction and switching losses in high voltage and high temperature environments and offer higher efficiency and reliability.

2--Radio Frequency (RF) Devices: 4H-SiC semi-insulated wafers can be used to fabricate high power, high frequency RF power amplifiers, chip resistors, filters, and other devices. Silicon carbide has better high-frequency performance and thermal stability due to its larger electron saturation drift rate and higher thermal conductivity.

3--Optoelectronic devices: 4H-SiC semi-insulated wafers can be used to manufacture high-power laser diodes, UV light detectors and optoelectronic integrated circuits.

In terms of market direction, the demand for 4H-SiC semi-insulated wafers is increasing with the growing fields of power electronics, RF and optoelectronics. This is due to the fact that silicon carbide has a wide range of applications, including energy efficiency, electric vehicles, renewable energy and communications. In the future, the market for 4H-SiC semi-insulated wafers remains very promising and is expected to replace conventional silicon materials in various applications.