3inch SiC substrate Production Dia76.2mm 4H-N

The main features of 3 inch silicon carbide mosfet wafers are as follows;

Silicon Carbide (SiC) is a wide-bandgap semiconductor material, characterized by high thermal conductivity, high electron mobility, and a high breakdown electric field strength. These properties make SiC wafers outstanding in high-power, high-frequency, and high-temperature applications. Particularly in the 4H-SiC polytype, its crystal structure provides excellent electronic performance, making it the material of choice for power electronic devices.

The 3-inch Silicon Carbide 4H-N wafer is a nitrogen-doped wafer with N-type conductivity. This doping method gives the wafer a higher electron concentration, thereby enhancing the device's conductive performance. The wafer's size, at 3 inches (diameter of 76.2 mm), is a commonly used dimension in the semiconductor industry, suitable for various manufacturing processes.

The 3-inch Silicon Carbide 4H-N wafer is produced using the Physical Vapor Transport (PVT) method. This process involves transforming SiC powder into single crystals at high temperatures, ensuring the crystal quality and uniformity of the wafer. Additionally, the wafer's thickness is typically around 0.35 mm, and its surface is subjected to double-side polishing to achieve an extremely high level of flatness and smoothness, which is crucial for subsequent semiconductor manufacturing processes.

The application range of the 3-inch Silicon Carbide 4H-N wafer is extensive, including high-power electronic devices, high-temperature sensors, RF devices, and optoelectronic devices. Its excellent performance and reliability enable these devices to operate stably under extreme conditions, meeting the demand for high-performance semiconductor materials in modern electronics industry.

We can provide 4H-N 3inch SiC substrate, different grades of substrate stock wafers. We can also arrange customization according to your needs. Welcome inquiry!