4H-N Dia205mm SiC seed from China P and D grade Monocrystaline

The PVT (Physical Vapor Transport) method is a common method used to grow silicon carbide single crystals. In the PVT growth process, silicon carbide single crystal material is deposited by physical evaporation and transport centered on silicon carbide seed crystals, so that new silicon carbide single crystals grow along the structure of the seed crystals.

In the PVT method, the silicon carbide seed crystal plays a key role as the starting point and template for growth, influencing the quality and structure of the final single crystal. During the PVT growth process, by controlling parameters such as temperature, pressure and gas-phase composition, the growth of silicon carbide single crystals can be realized to form large-size, high-quality single-crystal materials.

The growth process centered on silicon carbide seed crystals by the PVT method is of great significance in the production of silicon carbide single crystals, and plays a key role in obtaining high-quality, large-size silicon carbide single-crystal materials.

The 8inch SiCseed crystal we offer is very rare in the market at present. Due to the relatively high technical difficulty, the vast majority of factories can not provide large-size seed crystals. However, thanks to our long and close relationship with the Chinese silicon carbide factory, we can provide our customers with this 8-inch silicon carbide seed wafer. If you have any needs, please feel free to contact us. We can share the specifications with you first.