50.8mm/100mm AlN Template on NPSS/FSS AlN template on sapphire
AlN-On-Sapphire
AlN-On-Sapphire can be used to make a variety of photoelectric devices, such as:
1. LED chips: LED chips are usually made of aluminum nitride films and other materials. The efficiency and stability of leds can be improved by using AlN-On-Sapphire wafers as the substrate of LED chips.
2. Lasers: AlN-On-Sapphire wafers can also be used as substrates for lasers, which are commonly used in medical, communications, and materials processing.
3. Solar cells: The manufacture of solar cells requires the use of materials such as aluminum nitride. AlN-On-Sapphire as a substrate can improve the efficiency and life of solar cells.
4. Other optoelectronic devices: AlN-On-Sapphire wafers can also be used to manufacture photodetectors, optoelectronic devices, and other optoelectronic devices.
In conclusion, AlN-On-Sapphire wafers are widely used in the opto-electrical field due to their high thermal conductivity, high chemical stability, low loss and excellent optical properties.
50.8mm/100mm AlN Template on NPSS/FSS
Item | Remarks | |||
Description | AlN-on-NPSS template | AlN-on-FSS template |
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Wafer diameter | 50.8mm, 100mm | |||
Substrate | c-plane NPSS | c-plane Planar Sapphire (FSS) | ||
Substrate Thickness | 50.8mm, 100mmc-plane Planar Sapphire (FSS)100mm : 650 um | |||
Thickness of AIN epi-layer | 3~4 um (target: 3.3um) | |||
Conductivity | Insulating | |||
Surface |
As grown | |||
RMS<1nm | RMS<2nm | |||
Backside | Grinded | |||
FWHM(002)XRC | < 150 arcsec | < 150 arcsec | ||
FWHM(102)XRC | < 300 arcsec | < 300 arcsec | ||
Edge Exclusion | < 2mm | < 3mm | ||
Primary flat orientation | a-plane+0.1° | |||
Primary flat length | 50.8mm: 16+/-1 mm 100mm: 30+/-1 mm | |||
Package | Packaged in shipping box or single wafer container |