AlN on FSS 2inch 4inch NPSS/FSS AlN template for semiconductor area

Short Description:

The AlN on FSS (Flexible Substrate) wafers offer a unique combination of the exceptional thermal conductivity, mechanical strength, and electrical insulation properties of Aluminum Nitride (AlN), paired with the flexibility of a high-performance substrate. These 2-inch and 4-inch wafers are specifically designed for advanced semiconductor applications, especially where thermal management and device flexibility are critical. With the option of NPSS (Non-Polished Substrate) and FSS (Flexible Substrate) as a base, these AlN templates are ideal for applications in power electronics, RF devices, and flexible electronic systems, where high thermal conductivity and flexible integration are key to improving device performance and reliability.

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Properties

Material Composition:
Aluminum Nitride (AlN) – White, high-performance ceramic layer providing excellent thermal conductivity (typically 200-300 W/m·K), good electrical insulation, and high mechanical strength.
Flexible Substrate (FSS) – Flexible polymeric films (such as Polyimide, PET, etc.) offering durability and bendability without compromising the functionality of the AlN layer.

Wafer Sizes Available:
2-inch (50.8mm)
4-inch (100mm)

Thickness:
AlN Layer: 100-2000nm
FSS Substrate Thickness: 50µm-500µm (customizable based on requirements)

Surface Finish Options:
NPSS (Non-Polished Substrate) – Unpolished substrate surface, suitable for certain applications that require rougher surface profiles for better adhesion or integration.
FSS (Flexible Substrate) – Polished or unpolished flexible film, with the option for smooth or textured surfaces, depending on the specific application needs.

Electrical Properties:
Insulating – AlN’s electrical insulating properties make it ideal for high-voltage and power semiconductor applications.
Dielectric Constant: ~9.5
Thermal Conductivity: 200-300 W/m·K (depending on specific AlN grade and thickness)

Mechanical Properties:
Flexibility: AlN is deposited on a flexible substrate (FSS) which allows for bending and flexibility.
Surface Hardness: AlN is highly durable and resists physical damage under normal operating conditions.

Applications

High-Power Devices: Ideal for power electronics requiring high thermal dissipation, such as power converters, RF amplifiers, and high-power LED modules.

RF and Microwave Components: Suitable for components like antennas, filters, and resonators where both thermal conductivity and mechanical flexibility are needed.

Flexible Electronics: Perfect for applications where devices need to conform to non-planar surfaces or require a lightweight, flexible design (e.g., wearables, flexible sensors).

Semiconductor Packaging: Used as a substrate in semiconductor packaging, offering thermal dissipation in applications that generate high heat.

LEDs and Optoelectronics: For devices that require high-temperature operation with robust heat dissipation.

Parameter Table

Property	Value or Range
Wafer Size	2-inch (50.8mm), 4-inch (100mm)
AlN Layer Thickness	100nm – 2000nm
FSS Substrate Thickness	50µm – 500µm (customizable)
Thermal Conductivity	200 – 300 W/m·K
Electrical Properties	Insulating (Dielectric Constant: ~9.5)
Surface Finish	Polished or Unpolished
Substrate Type	NPSS (Non-Polished Substrate), FSS (Flexible Substrate)
Mechanical Flexibility	High flexibility, ideal for flexible electronics
Color	White to Off-White (depending on substrate)

Applications

●Power Electronics: The combination of high thermal conductivity and flexibility makes these wafers perfect for power devices such as power converters, transistors, and voltage regulators that require efficient heat dissipation.
●RF/Microwave Devices: Due to AlN’s superior thermal properties and low electrical conductivity, these wafers are used in RF components like amplifiers, oscillators, and antennas.
●Flexible Electronics: The flexibility of the FSS layer combined with the excellent thermal management of AlN makes it an ideal choice for wearable electronics and sensors.
●Semiconductor Packaging: Used for high-performance semiconductor packaging where effective thermal dissipation and reliability are critical.
●LED & Optoelectronic Applications: Aluminum Nitride is an excellent material for LED packaging and other optoelectronic devices requiring high heat resistance.

Q&A (Frequently Asked Questions)

Q1: What are the benefits of using AlN on FSS wafers?

A1: AlN on FSS wafers combine the high thermal conductivity and electrical insulation properties of AlN with the mechanical flexibility of a polymer substrate. This enables improved heat dissipation in flexible electronic systems while maintaining device integrity under bending and stretching conditions.

Q2: What sizes are available for AlN on FSS wafers?

A2: We offer 2-inch and 4-inch wafer sizes. Custom sizes can be discussed upon request to meet your specific application needs.

Q3: Can I customize the thickness of the AlN layer?

A3: Yes, the AlN layer thickness can be customized, with typical ranges from 100nm to 2000nm depending on your application requirements.