CVD method for producing high purity SiC raw materials in silicon carbide synthesis furnace at 1600℃

Short Description:

A Silicon carbide (SiC) synthesis furnace (CVD). It uses a Chemical Vapor Deposition (CVD) technology to ₄ gaseous silicon sources (e.g. SiH₄, SiCl₄) in a high temperature environment in which they react to carbon sources (e.g. C₃H₈, CH₄). A key device for growing high-purity silicon carbide crystals on a substrate (graphite or SiC seed). The technology is mainly used for preparing SiC single crystal substrate (4H/6H-SiC), which is the core process equipment for manufacturing power semiconductors (such as MOSFET, SBD).

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Working principle：

1. Precursor supply. Silicon source (e.g. SiH₄) and carbon source (e.g. C₃H₈) gases are mixed in proportion and fed into the reaction chamber.

2. High temperature decomposition: At a high temperature of 1500~2300℃, the gas decomposition generates Si and C active atoms.

3. Surface reaction: Si and C atoms are deposited on the substrate surface to form a SiC crystal layer.

4. Crystal growth: Through the control of temperature gradient, gas flow and pressure, to achieve directional growth along the c axis or the a axis.

Key parameters:

· Temperature: 1600~2200℃ (>2000℃ for 4H-SiC)

· Pressure: 50~200mbar (low pressure to reduce gas nucleation)

· Gas ratio: Si/C≈1.0~1.2 (to avoid Si or C enrichment defects)

Main features:

(1) Crystal quality
Low defect density: microtubule density < 0.5cm ⁻², dislocation density <10⁴ cm⁻².

Polycrystalline type control: can grow 4H-SiC (mainstream), 6H-SiC, 3C-SiC and other crystal types.

(2) Equipment performance
High temperature stability: graphite induction heating or resistance heating, temperature >2300℃.

Uniformity control: temperature fluctuation ±5℃, growth rate 10~50μm/h.

Gas system: High precision mass flowmeter (MFC), gas purity ≥99.999%.

(3) Technological advantages
High purity: Background impurity concentration <10¹⁶ cm⁻³ (N, B, etc.).

Large sizing: Support 6 "/8" SiC substrate growth.

(4) Energy consumption and cost
High energy consumption (200~500kW·h per furnace), accounting for 30%~50% of the production cost of SiC substrate.

Core applications:

1. Power semiconductor substrate: SiC MOSFETs for manufacturing electric vehicles and photovoltaic inverters.

2. Rf device: 5G base station GaN-on-SiC epitaxial substrate.

3.Extreme environment devices: high temperature sensors for aerospace and nuclear power plants.

Technical specification：

Specification	Details
Dimensions (L × W × H)	4000 x 3400 x 4300 mm or customize
Furnace chamber diameter	1100mm
Loading capacity	50kg
The limit vacuum degree	10-2Pa(2h after the molecular pump starts)
Chamber pressure rise rate	≤10Pa/h(after calcination)
Lower furnace cover lifting stroke	1500mm
Heating method	Induction heating
The maximum temperature in the furnace	2400°C
Heating power supply	2X40kW
Temperature measurement	Two-color infrared temperature measurement
Temperature range	900~3000℃
Temperature control accuracy	±1°C
Control pressure range	1~700mbar
Pressure Control Accuracy	1~5mbar ±0.1mbar; 5~100mbar ±0.2mbar; 100~700mbar ±0.5mbar
Loading method	Lower loading;
Optional configuration	Double temperature measuring point, unloading forklift.

XKH Services:

XKH provides full-cycle services for silicon carbide CVD furnaces, including equipment customization (temperature zone design, gas system configuration), process development (crystal control, defect optimization), technical training (operation and maintenance) and after-sales support (spare parts supply of key components, remote diagnosis) to help customers achieve high-quality SiC substrate mass production. And provide process upgrade services to continuously improve crystal yield and growth efficiency.