Gallium Nitride on Silicon wafer GaN on Si 4inch 6inch Tailored Si Substrate Orientation, Resistivity, and N-type/P-type Options

Short Description:

Our Customized Gallium Nitride on Silicon (GaN-on-Si) Wafers are designed to meet the increasing demands of high-frequency and high-power electronic applications. Available in both 4-inch and 6-inch wafer sizes, these wafers offer customization options for Si substrate orientation, resistivity, and doping type (N-type/P-type) to suit specific application needs. GaN-on-Si technology combines the advantages of gallium nitride (GaN) with the low-cost silicon (Si) substrate, enabling better thermal management, higher efficiency, and faster switching speeds. With their wide bandgap and low electrical resistance, these wafers are ideal for power conversion, RF applications, and high-speed data transfer systems.

Send email to us

Product Detail

Product Tags

Features

●Wide Bandgap: GaN (3.4 eV) provides a significant improvement in high-frequency, high-power, and high-temperature performance compared to traditional silicon, making it ideal for power devices and RF amplifiers.
●Customizable Si Substrate Orientation: Choose from different Si substrate orientations such as <111>, <100>, and others to match specific device requirements.
●Customized Resistivity: Select between different resistivity options for Si, from semi-insulating to high-resistivity and low-resistivity to optimize device performance.
●Doping Type: Available in N-type or P-type doping to match the requirements of power devices, RF transistors, or LEDs.
●High Breakdown Voltage: GaN-on-Si wafers have high breakdown voltage (up to 1200V), allowing them to handle high-voltage applications.
●Faster Switching Speeds: GaN has higher electron mobility and lower switching losses than silicon, making GaN-on-Si wafers ideal for high-speed circuits.
●Enhanced Thermal Performance: Despite the low thermal conductivity of silicon, GaN-on-Si still offers superior thermal stability, with better heat dissipation than traditional silicon devices.

Technical Specifications

Parameter	Value
Wafer Size	4-inch, 6-inch
Si Substrate Orientation	<111>, <100>, custom
Si Resistivity	High-resistivity, Semi-insulating, Low-resistivity
Doping Type	N-type, P-type
GaN Layer Thickness	100 nm – 5000 nm (customizable)
AlGaN Barrier Layer	24% – 28% Al (typical 10-20 nm)
Breakdown Voltage	600V – 1200V
Electron Mobility	2000 cm²/V·s
Switching Frequency	Up to 18 GHz
Wafer Surface Roughness	RMS ~0.25 nm (AFM)
GaN Sheet Resistance	437.9 Ω·cm²
Total Wafer Warp	< 25 µm (maximum)
Thermal Conductivity	1.3 – 2.1 W/cm·K

Applications

Power Electronics: GaN-on-Si is ideal for power electronics such as power amplifiers, converters, and inverters used in renewable energy systems, electric vehicles (EVs), and industrial equipment. Its high breakdown voltage and low on-resistance ensure efficient power conversion, even in high-power applications.

RF and Microwave Communications: GaN-on-Si wafers offer high-frequency capabilities, making them perfect for RF power amplifiers, satellite communications, radar systems, and 5G technologies. With higher switching speeds and the ability to operate at higher frequencies (up to 18 GHz), GaN devices offer superior performance in these applications.

Automotive Electronics: GaN-on-Si is used in automotive power systems, including on-board chargers (OBCs) and DC-DC converters. Its ability to operate at higher temperatures and withstand higher voltage levels makes it a good fit for electric vehicle applications that demand robust power conversion.

LED and Optoelectronics: GaN is the material of choice for blue and white LEDs. GaN-on-Si wafers are used to produce high-efficiency LED lighting systems, providing excellent performance in lighting, display technologies, and optical communications.

Q&A

Q1: What is the advantage of GaN over silicon in electronic devices?

A1: GaN has a wider bandgap (3.4 eV) than silicon (1.1 eV), which allows it to withstand higher voltages and temperatures. This property enables GaN to handle high-power applications more efficiently, reducing power loss and increasing system performance. GaN also offers faster switching speeds, which are crucial for high-frequency devices such as RF amplifiers and power converters.

Q2: Can I customize the Si substrate orientation for my application?

A2: Yes, we offer customizable Si substrate orientations such as <111>, <100>, and other orientations depending on your device requirements. The orientation of the Si substrate plays a key role in device performance, including electrical characteristics, thermal behavior, and mechanical stability.

Q3: What are the benefits of using GaN-on-Si wafers for high-frequency applications?

A3: GaN-on-Si wafers offer superior switching speeds, enabling faster operation at higher frequencies compared to silicon. This makes them ideal for RF and microwave applications, as well as high-frequency power devices such as HEMTs (High Electron Mobility Transistors) and RF amplifiers. GaN's higher electron mobility also results in lower switching losses and improved efficiency.

Q4: What doping options are available for GaN-on-Si wafers?

A4: We offer both N-type and P-type doping options, which are commonly used for different types of semiconductor devices. N-type doping is ideal for power transistors and RF amplifiers, while P-type doping is often used for optoelectronic devices like LEDs.

Conclusion

Our Customized Gallium Nitride on Silicon (GaN-on-Si) Wafers provide the ideal solution for high-frequency, high-power, and high-temperature applications. With customizable Si substrate orientations, resistivity, and N-type/P-type doping, these wafers are tailored to meet the specific needs of industries ranging from power electronics and automotive systems to RF communication and LED technologies. Leveraging the superior properties of GaN and the scalability of silicon, these wafers offer enhanced performance, efficiency, and future-proofing for next-generation devices.