GaN on Glass 4-Inch: Customizable Glass Options Including JGS1, JGS2, BF33, and Ordinary Quartz
Features
●Wide Bandgap: GaN has a 3.4 eV bandgap, which allows for higher efficiency and greater durability under high-voltage and high-temperature conditions compared to traditional semiconductor materials like silicon.
●Customizable Glass Substrates: Available with JGS1, JGS2, BF33, and Ordinary Quartz glass options to cater to different thermal, mechanical, and optical performance requirements.
●High Thermal Conductivity: GaN's high thermal conductivity ensures effective heat dissipation, making these wafers ideal for power applications and devices that generate high heat.
●High Breakdown Voltage: GaN’s ability to sustain high voltages makes these wafers suitable for power transistors and high-frequency applications.
●Excellent Mechanical Strength: The glass substrates, combined with GaN's properties, provide robust mechanical strength, enhancing the wafer’s durability in demanding environments.
●Reduced Manufacturing Costs: Compared to traditional GaN-on-Silicon or GaN-on-Sapphire wafers, GaN-on-glass is a more cost-effective solution for large-scale production of high-performance devices.
●Tailored Optical Properties: Various glass options allow for customization of the optical characteristics of the wafer, making it suitable for applications in optoelectronics and photonics.
Technical Specifications
|
Parameter |
Value |
| Wafer Size | 4-inch |
| Glass Substrate Options | JGS1, JGS2, BF33, Ordinary Quartz |
| GaN Layer Thickness | 100 nm – 5000 nm (customizable) |
| GaN Bandgap | 3.4 eV (wide bandgap) |
| Breakdown Voltage | Up to 1200V |
| Thermal Conductivity | 1.3 – 2.1 W/cm·K |
| Electron Mobility | 2000 cm²/V·s |
| Wafer Surface Roughness | RMS ~0.25 nm (AFM) |
| GaN Sheet Resistance | 437.9 Ω·cm² |
| Resistivity | Semi-insulating, N-type, P-type (customizable) |
| Optical Transmission | >80% for visible and UV wavelengths |
| Wafer Warp | < 25 µm (maximum) |
| Surface Finish | SSP (single-side polished) |
Applications
Optoelectronics:
GaN-on-glass wafers are widely used in LEDs and laser diodes due to GaN’s high efficiency and optical performance. The ability to select glass substrates such as JGS1 and JGS2 allows for customization in optical transparency, making them ideal for high-power, high-brightness blue/green LEDs and UV lasers.
Photonics:
GaN-on-glass wafers are ideal for photodetectors, photonic integrated circuits (PICs), and optical sensors. Their excellent light transmission properties and high stability in high-frequency applications make them suitable for communications and sensor technologies.
Power Electronics:
Due to their wide bandgap and high breakdown voltage, GaN-on-glass wafers are used in high-power transistors and high-frequency power conversion. GaN’s ability to handle high voltages and thermal dissipation makes it perfect for power amplifiers, RF power transistors, and power electronics in industrial and consumer applications.
High-Frequency Applications:
GaN-on-glass wafers exhibit excellent electron mobility and can operate at high switching speeds, making them ideal for high-frequency power devices, microwave devices, and RF amplifiers. These are crucial components in 5G communication systems, radar systems, and satellite communication.
Automotive Applications:
GaN-on-glass wafers are also used in automotive power systems, particularly in on-board chargers (OBCs) and DC-DC converters for electric vehicles (EVs). The wafers' ability to handle high temperatures and voltages allows them to be used in power electronics for EVs, offering greater efficiency and reliability.
Medical Devices:
GaN’s properties also make it an attractive material for use in medical imaging and biomedical sensors. Its ability to operate at high voltages and its resistance to radiation make it ideal for applications in diagnostic equipment and medical lasers.
Q&A
Q1: Why is GaN-on-glass a good option compared to GaN-on-Silicon or GaN-on-Sapphire?
A1: GaN-on-glass offers several advantages, including cost-effectiveness and better thermal management. While GaN-on-Silicon and GaN-on-Sapphire provide excellent performance, glass substrates are cheaper, more readily available, and customizable in terms of optical and mechanical properties. Additionally, GaN-on-glass wafers provide excellent performance in both optical and high-power electronic applications.
Q2: What is the difference between JGS1, JGS2, BF33, and Ordinary Quartz glass options?
A2:
- JGS1 and JGS2 are high-quality optical glass substrates known for their high optical transparency and low thermal expansion, making them ideal for photonic and optoelectronic devices.
- BF33 glass offers higher refractive index and is ideal for applications requiring enhanced optical performance, such as laser diodes.
- Ordinary Quartz provides high thermal stability and resistance to radiation, making it suitable for high-temperature and harsh environment applications.
Q3: Can I customize the resistivity and doping type for GaN-on-glass wafers?
A3: Yes, we offer customizable resistivity and doping types (N-type or P-type) for GaN-on-glass wafers. This flexibility allows the wafers to be tailored to specific applications, including power devices, LEDs, and photonic systems.
Q4: What are the typical applications for GaN-on-glass in optoelectronics?
A4: In optoelectronics, GaN-on-glass wafers are commonly used for blue and green LEDs, UV lasers, and photodetectors. The customizable optical properties of the glass allow for devices with high light transmission, making them ideal for applications in display technologies, lighting, and optical communication systems.
Q5: How does GaN-on-glass perform in high-frequency applications?
A5: GaN-on-glass wafers offer excellent electron mobility, allowing them to perform well in high-frequency applications such as RF amplifiers, microwave devices, and 5G communication systems. Their high breakdown voltage and low switching losses make them suitable for high-power RF devices.
Q6: What is the typical breakdown voltage of GaN-on-glass wafers?
A6: GaN-on-glass wafers typically support breakdown voltages up to 1200V, making them suitable for high-power and high-voltage applications. Their wide bandgap allows them to handle higher voltages than conventional semiconductor materials like silicon.
Q7: Can GaN-on-glass wafers be used in automotive applications?
A7: Yes, GaN-on-glass wafers are used in automotive power electronics, including DC-DC converters and on-board chargers (OBCs) for electric vehicles. Their ability to operate at high temperatures and handle high voltages makes them ideal for these demanding applications.
Conclusion
Our GaN on Glass 4-Inch Wafers offer a unique and customizable solution for a variety of applications in optoelectronics, power electronics, and photonics. With glass substrate options such as JGS1, JGS2, BF33, and Ordinary Quartz, these wafers provide versatility in both mechanical and optical properties, enabling tailored solutions for high-power and high-frequency devices. Whether for LEDs, laser diodes, or RF applications, GaN-on-glass wafers
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