N-Type SiC Composite Substrates Dia6inch High quality monocrystaline and low quality substrate
N-Type SiC Composite Substrates Common parameter table
| 项目Items | 指标Specification | 项目Items | 指标Specification |
| 直径Diameter | 150±0.2mm | 正 面 ( 硅 面 ) 粗 糙 度 Front (Si-face)roughness |
Ra≤0.2nm (5μm*5μm) |
| 晶型Polytype | 4H | Edge Chip,Scratch,Crack (visual inspection) | None |
| 电阻率Resistivity | 0.015-0.025ohm ·cm | 总厚度变化TTV | ≤3μm |
| Transfer layer Thickness | ≥0.4μm | 翘曲度Warp | ≤35μm |
| 空洞Void | ≤5ea/wafer (2mm>D>0.5mm) | 总厚度Thickness | 350±25μm |
The "N-type" designation refers to the type of doping used in SiC materials. In semiconductor physics, doping involves the intentional introduction of impurities into a semiconductor to alter its electrical properties. N-type doping introduces elements that provide an excess of free electrons, giving the material a negative charge carrier concentration.
The advantages of N-type SiC composite substrates include:
1. High-temperature performance: SiC has high thermal conductivity and can operate at high temperatures, making it suitable for high-power and high-frequency electronic applications.
2. High breakdown voltage: SiC materials have a high breakdown voltage, enabling them to withstand high electric fields without electrical breakdown.
3. Chemical and environmental resistance: SiC is chemically resistant and can withstand harsh environmental conditions, making it suitable for use in challenging applications.
4. Reduced power loss: Compared to traditional silicon-based materials, SiC substrates enable more efficient power conversion and reduce power loss in electronic devices.
5. Wide bandgap: SiC has a wide bandgap, allowing the development of electronic devices that can operate at higher temperatures and higher power densities.
Overall, N-type SiC composite substrates offer significant advantages for the development of high-performance electronic devices, especially in applications where high-temperature operation, high power density, and efficient power conversion are critical.
