N-Type SiC on Si Composite Substrates Dia6inch
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等级 Grade |
U 级 |
P级 |
D级 |
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Low BPD Grade |
Production Grade |
Dummy Grade |
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直径 Diameter |
150.0 mm±0.25mm |
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厚度 Thickness |
500 μm±25μm |
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晶片方向 Wafer Orientation |
Off axis : 4.0°toward < 11-20 > ±0.5°for 4H-N On axis : <0001>±0.5°for 4H-SI |
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主定位边方向 Primary Flat |
{10-10}±5.0° |
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主定位边长度 Primary Flat Length |
47.5 mm±2.5 mm |
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边缘 Edge exclusion |
3 mm |
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总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp |
≤15μm /≤40μm /≤60μm |
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微管密度和基面位错MPD&BPD |
MPD≤1 cm-2 |
MPD≤5 cm-2 |
MPD≤15 cm-2 |
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BPD≤1000cm-2 |
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电阻率 Resistivity |
≥1E5 Ω·cm |
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表面粗糙度 Roughness |
Polish Ra≤1 nm |
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CMP Ra≤0.5 nm |
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裂纹(强光灯观测) # |
None |
Cumulative length ≤10mm, single length≤2mm |
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Cracks by high intensity light |
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六方空洞（强光灯观测）* |
Cumulative area ≤1% |
Cumulative area ≤5% |
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Hex Plates by high intensity light |
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多型(强光灯观测)* |
None |
Cumulative area≤5% |
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Polytype Areas by high intensity light |
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划痕(强光灯观测)*& |
3 scratches to 1×wafer diameter |
5 scratches to 1×wafer diameter |
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Scratches by high intensity light |
cumulative length |
cumulative length |
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崩边# Edge chip |
None |
5 allowed, ≤1 mm each |
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表面污染物（强光灯观测） |
None |
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Contamination by high intensity light |
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Detailed Diagram
