N-Type SiC on Si Composite Substrates Dia6inch

Short Description:

N-Type SiC on Si composite substrates are semiconductor materials that consist of a layer of n-type silicon carbide (SiC) deposited on a silicon (Si) substrate.

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Product Tags

等级 Grade	U 级	P级	D级
	Low BPD Grade	Production Grade	Dummy Grade
直径 Diameter	150.0 mm±0.25mm
厚度 Thickness	500 μm±25μm
晶片方向 Wafer Orientation	Off axis : 4.0°toward < 11-20 > ±0.5°for 4H-N On axis : <0001>±0.5°for 4H-SI
主定位边方向 Primary Flat	{10-10}±5.0°
主定位边长度 Primary Flat Length	47.5 mm±2.5 mm
边缘 Edge exclusion	3 mm
总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp	≤15μm /≤40μm /≤60μm
微管密度和基面位错MPD&BPD	MPD≤1 cm-2	MPD≤5 cm-2	MPD≤15 cm-2
	BPD≤1000cm-2
电阻率 Resistivity	≥1E5 Ω·cm
表面粗糙度 Roughness	Polish Ra≤1 nm
	CMP Ra≤0.5 nm
裂纹(强光灯观测) #	None		Cumulative length ≤10mm, single length≤2mm
Cracks by high intensity light
六方空洞（强光灯观测）*	Cumulative area ≤1%		Cumulative area ≤5%
Hex Plates by high intensity light
多型(强光灯观测)*	None		Cumulative area≤5%
Polytype Areas by high intensity light
划痕(强光灯观测)*&	3 scratches to 1×wafer diameter		5 scratches to 1×wafer diameter
Scratches by high intensity light	cumulative length		cumulative length
崩边# Edge chip	None		5 allowed, ≤1 mm each
表面污染物（强光灯观测）	None
Contamination by high intensity light