N-Type SiC on Si Composite Substrates Dia6inch

等级 Grade

U 级

P级

D级

Low BPD Grade

Production Grade

Dummy Grade

直径 Diameter

150.0 mm±0.25mm

厚度 Thickness

500 μm±25μm

晶片方向 Wafer Orientation

Off axis : 4.0°toward < 11-20 > ±0.5°for 4H-N On axis : <0001>±0.5°for 4H-SI

主定位边方向 Primary Flat

{10-10}±5.0°

主定位边长度 Primary Flat Length

47.5 mm±2.5 mm

边缘 Edge exclusion

3 mm

总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp

≤15μm /≤40μm /≤60μm

微管密度和基面位错MPD&BPD

MPD≤1 cm-2

MPD≤5 cm-2

MPD≤15 cm-2

BPD≤1000cm-2

电阻率 Resistivity

≥1E5 Ω·cm

表面粗糙度 Roughness

Polish Ra≤1 nm

CMP Ra≤0.5 nm

裂纹(强光灯观测) #

None

Cumulative  length ≤10mm,  single length≤2mm

Cracks by high intensity light

六方空洞（强光灯观测）*

Cumulative area  ≤1%

Cumulative area  ≤5%

Hex Plates by high intensity light

多型(强光灯观测)*

None

Cumulative area≤5%

Polytype Areas by high intensity light

划痕(强光灯观测)*&

3 scratches to 1×wafer diameter

5 scratches to 1×wafer diameter

Scratches by high intensity light

cumulative length

cumulative length

崩边# Edge chip

None

5 allowed,  ≤1 mm each

表面污染物（强光灯观测）

None

Contamination by high intensity light