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Sapphire Watch Case new trend in the world—XINKEHUI Provide you multiple options
Sapphire watch cases have gained increasing popularity in the luxury watch industry due to their exceptional durability, scratch resistance, and clear aesthetic appeal. Known for their strength and ability to withstand daily wear while maintaining a pristine appearance, ...Read more -
LiTaO3 Wafer PIC — Low-Loss Lithium Tantalate-on-Insulator Waveguide for On-Chip Nonlinear Photonics
Abstract: We have developed a 1550 nm insulator-based lithium tantalate waveguide with a loss of 0.28 dB/cm and a ring resonator quality factor of 1.1 million. The application of χ(3) nonlinearity in nonlinear photonics has been studied. The advantages of lithium niobate...Read more -
XKH-Knowledge Sharing-What is wafer dicing technology?
Wafer dicing technology, as a critical step in the semiconductor manufacturing process, is directly linked to chip performance, yield, and production costs. #01 Background and Significance of Wafer Dicing 1.1 Definition of Wafer Dicing Wafer dicing (also known as scri...Read more -
Thin-film lithium tantalate (LTOI): The Next Star Material for High-Speed Modulators?
Thin-film lithium tantalate (LTOI) material is emerging as a significant new force in the integrated optics field. This year, several high-level works on LTOI modulators have been published, with high-quality LTOI wafers provided by Professor Xin Ou from the Shanghai Ins...Read more -
Deep Understanding of the SPC System in Wafer Manufacturing
SPC (Statistical Process Control) is a crucial tool in the wafer manufacturing process, used to monitor, control, and improve the stability of various stages in manufacturing. 1. Overview of the SPC System SPC is a method that uses sta...Read more -
Why is epitaxy performed on a wafer substrate?
Growing an additional layer of silicon atoms on a silicon wafer substrate has several advantages: In CMOS silicon processes, epitaxial growth (EPI) on the wafer substrate is a critical process step. 1、Improving crystal quali...Read more -
Principles, Processes, Methods, and Equipment for Wafer Cleaning
Wet cleaning (Wet Clean) is one of the critical steps in semiconductor manufacturing processes, aimed at removing various contaminants from the surface of the wafer to ensure that subsequent process steps can be performed on a clean surface. ...Read more -
The relationship between crystal planes and crystal orientation.
Crystal planes and crystal orientation are two core concepts in crystallography, closely related to the crystal structure in silicon-based integrated circuit technology. 1.Definition and Properties of Crystal Orientation Crystal orientation represents a specific directio...Read more -
What are the advantages of Through Glass Via(TGV) and Through Silicon Via, TSV (TSV) processes over TGV？
The advantages of Through Glass Via (TGV) and Through Silicon Via(TSV) processes over TGV are mainly: (1) excellent high-frequency electrical characteristics. Glass material is an insulator material, the dielectric constant is only about 1/3 of that of silicon material, and the loss factor is 2-...Read more -
Conductive and semi-insulated silicon carbide substrate applications
The silicon carbide substrate is divided into semi-insulating type and conductive type. At present, the mainstream specification of semi-insulated silicon carbide substrate products is 4 inches. In the conductive silicon carbide ma...Read more -
Are there also differences in the application of sapphire wafers with different crystal orientations?
Sapphire is a single crystal of alumina, belongs to the tripartite crystal system, hexagonal structure, its crystal structure is composed of three oxygen atoms and two aluminum atoms in covalent bond type, arranged very closely, with strong bonding chain and lattice energy, while its crystal inte...Read more -
What is the difference between SiC conductive substrate and semi-insulated substrate?
SiC silicon carbide device refers to the device made of silicon carbide as the raw material. According to the different resistance properties, it is divided into conductive silicon carbide power devices and semi-insulated silicon carbide RF devices. Main device forms and...Read more