P-type SiC substrate SiC wafer Dia2inch new product

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2 inch P-Type Silicon Carbide (SiC) Wafer in either 4H or 6H polytype. It has similar properties as the N-type Silicon Carbide (SiC) wafer, such as high temperature resistance, high thermal conductivity, high electrical conductivity, etc. P-type SiC substrate is generally used for manufacturing power devices, especially the manufacturing of Insulated Gate Bipolar Transistors (IGBT). The design of IGBT often involves P-N junctions, where P-type SiC can be advantageous for controlling the behavior of the devices.

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P-type silicon carbide substrates are commonly used to make power devices, such as Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, which is an on-off switch. MOSFET=IGFET(metal oxide semiconductor field effect tube, or insulated gate type field effect transistor). BJT(Bipolar Junction Transistor, also known as the transistor), bipolar means that there are two kinds of electron and hole carriers involved in the conduction process at work, generally there is PN junction involved in conduction.

The 2-inch p-type silicon carbide (SiC) wafer is in 4H or 6H polytype. It has similar properties to n-type silicon carbide (SiC) wafers, such as high temperature resistance, high thermal conductivity, and high electrical conductivity. p-type SiC substrates are commonly used in the fabrication of power devices, particularly for the fabrication of insulated-gate bipolar transistors (IGBTs). the design of IGBTs typically involves P-N junctions, where p-type SiC is advantageous for controlling the behavior of the device.