P-type SiC wafer 4H/6H-P 3C-N 6inch thickeness 350 μm with Primary Flat Orientation

Short Description:

The P-type SiC wafer, 4H/6H-P 3C-N, is a 6-inch semiconductor material with a thickness of 350 μm and primary flat orientation, designed for advanced electronic applications. Known for its high thermal conductivity, high breakdown voltage, and resistance to extreme temperatures and corrosive environments, this wafer is suitable for high-performance electronic devices. The P-type doping introduces holes as the primary charge carriers, making it ideal for power electronics and RF applications. Its robust structure ensures stable performance under high-voltage and high-frequency conditions, making it well-suited for power devices, high-temperature electronics, and high-efficiency energy conversion. The primary flat orientation ensures accurate alignment in the manufacturing process, providing consistency in device fabrication.

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Specification4H/6H-P Type SiC Composite Substrates Common parameter table

6 inch diameter Silicon Carbide (SiC) Substrate Specification

Grade			Zero MPD ProductionGrade (Z Grade)	Standard ProductionGrade (P Grade)	Dummy Grade (D Grade)
Diameter			145.5 mm~150.0 mm
Thickness			350 μm ± 25 μm
Wafer Orientation			-Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N
Micropipe Density			0 cm-2
Resistivity	p-type 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-type 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Primary Flat Orientation		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Primary Flat Length			32.5 mm ± 2.0 mm
Secondary Flat Length			18.0 mm ± 2.0 mm
Secondary Flat Orientation			Silicon face up: 90° CW. from Prime flat ± 5.0°
Edge Exclusion			3 mm		6 mm
LTV/TTV/Bow /Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Roughness			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Edge Cracks By High Intensity Light			None		Cumulative length ≤ 10 mm, single length≤2 mm
Hex Plates By High Intensity Light			Cumulative area ≤0.05%		Cumulative area ≤0.1%
Polytype Areas By High Intensity Light			None		Cumulative area≤3%
Visual Carbon Inclusions			Cumulative area ≤0.05%		Cumulative area ≤3%
Silicon Surface Scratches By High Intensity Light			None		Cumulative length≤1×wafer diameter
Edge Chips High By Intensity Light			None permitted ≥0.2mm width and depth		5 allowed, ≤1 mm each
Silicon Surface Contamination By High Intensity			None
Packaging			Multi-wafer Cassette or Single Wafer Container

Notes:

※ Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face o

The P-type SiC wafer, 4H/6H-P 3C-N, with its 6-inch size and 350 μm thickness, plays a crucial role in the industrial production of high-performance power electronics. Its excellent thermal conductivity and high breakdown voltage make it ideal for manufacturing components such as power switches, diodes, and transistors used in high-temperature environments like electric vehicles, power grids, and renewable energy systems. The wafer’s ability to operate efficiently in harsh conditions ensures reliable performance in industrial applications requiring high power density and energy efficiency. Additionally, its primary flat orientation aids in precise alignment during device fabrication, enhancing production efficiency and product consistency.

The advantages of N-type SiC composite substrates include

High Thermal Conductivity: P-type SiC wafers efficiently dissipate heat, making them ideal for high-temperature applications.
High Breakdown Voltage: Capable of withstanding high voltages, ensuring reliability in power electronics and high-voltage devices.
Resistance to Harsh Environments: Excellent durability in extreme conditions, such as high temperatures and corrosive environments.
Efficient Power Conversion: The P-type doping facilitates efficient power handling, making the wafer suitable for energy conversion systems.
Primary Flat Orientation: Ensures precise alignment during manufacturing, improving device accuracy and consistency.
Thin Structure (350 μm): The wafer's optimal thickness supports integration into advanced, space-constrained electronic devices.

Overall, the P-type SiC wafer, 4H/6H-P 3C-N, offers a range of advantages that make it highly suitable for industrial and electronic applications. Its high thermal conductivity and breakdown voltage enable reliable operation in high-temperature and high-voltage environments, while its resistance to harsh conditions ensures durability. The P-type doping allows for efficient power conversion, making it ideal for power electronics and energy systems. Additionally, the wafer's primary flat orientation ensures precise alignment during the manufacturing process, enhancing production consistency. With a thickness of 350 μm, it is well-suited for integration into advanced, compact devices.