Products
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Surface processing method of titanium-doped sapphire crystal laser rods
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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200mm 8inch GaN on sapphire Epi-layer wafer substrate
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Sapphire tube KY Method all transparent Customizable
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High strength silicon carbide ceramic tube SIC different types customized fire resistance
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Silicon carbide ceramic tray sucker Silicon carbide ceramic tube supply high temperature sintering custom processing
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SiC ceramic chuck tray Ceramic suction cups precision machining customized
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Sapphire fiber diameter 75-500μm LHPG method can be used for sapphire fiber high temperature sensor
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Sapphire fiber single crystal Al₂O₃ high optical transmittance melting point 2072℃ can be used for laser window materials
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Patterned Sapphire Substrate PSS 2inch 4inch 6inch ICP dry etching can be used for LED chips
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Small table laser punching machine 1000W-6000W minimum aperture 0.1MM can be used for metal glass ceramic materials
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12 inch SIC substrate silicon carbide prime grade diameter 300mm large size 4H-N Suitable for high power device heat dissipation