Products
-
Surface processing method of titanium-doped sapphire crystal laser rods
-
2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
-
200mm 8inch GaN on sapphire Epi-layer wafer substrate
-
Sapphire tube KY Method all transparent Customizable
-
Sapphire fiber diameter 75-500μm LHPG method can be used for sapphire fiber high temperature sensor
-
Sapphire fiber single crystal Al₂O₃ high optical transmittance melting point 2072℃ can be used for laser window materials
-
Patterned Sapphire Substrate PSS 2inch 4inch 6inch ICP dry etching can be used for LED chips
-
Small table laser punching machine 1000W-6000W minimum aperture 0.1MM can be used for metal glass ceramic materials
-
12 inch SIC substrate silicon carbide prime grade diameter 300mm large size 4H-N Suitable for high power device heat dissipation
-
High precision laser drilling machine is suitable for sapphire ceramic material gem bearing nozzle drilling
-
Sapphire single crystal Al2O3 growth furnace KY method Kyropoulos production of high quality sapphire crystal
-
2 inch 4 inch 6 inch Patterned Sapphire Substrate (PSS) on which GaN material is grown can use for LED lighting