Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
Items | Specification | Items | Specification |
Diameter | 150±0.2mm | Front (Si-face)roughness | Ra≤0.2nm (5μm*5μm) |
Polytype | 4H | Edge Chip,Scratch,Crack (visual inspection) | None |
Resistivity | ≥1E8ohm·cm | TTV | ≤5μm |
Transfer layer Thickness | ≥0.4μm | Warp | ≤35μm |
Void | ≤5ea/wafer (2mm>D>0.5mm) | Thickness | 500±25μm |
Advantages of semi-insulating SiC composite substrates include:
High resistivity: semi-insulating SiC materials have a high resistivity, making them somewhat capable of blocking current flow and suitable for specific types of electronic devices.
High-temperature performance: SiC materials are capable of operating in high-temperature environments, making them suitable for high-power and high-frequency electronic applications.
High Breakdown Voltage: SiC materials have a high breakdown voltage and are able to withstand high electric fields without electrical breakdown.
Chemical and Environmental Resistance: SiC is resistant to chemical corrosion and can withstand harsh environmental conditions for demanding applications.
Reduced power loss: SiC substrates allow for more efficient power conversion and lower power loss in electronics compared to traditional silicon-based materials.
Overall, semi-insulating SiC composite substrates offer significant advantages in the development of high-performance electronics, especially in applications requiring high-temperature operation, high power density and efficient power conversion.
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