Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI

Short Description:

Semi-insulated SiC composite substrate is a semiconductor material used in the manufacture of electronic devices. These substrates are made of silicon carbide (SiC) and have excellent thermal conductivity, high breakdown voltage and resistance to harsh environmental conditions.

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Product Detail

Product Tags

Items	Specification	Items	Specification
Diameter	150±0.2mm	Front (Si-face)roughness	Ra≤0.2nm (5μm*5μm)
Polytype	4H	Edge Chip,Scratch,Crack (visual inspection)	None
Resistivity	≥1E8ohm·cm	TTV	≤5μm
Transfer layer Thickness	≥0.4μm	Warp	≤35μm
Void	≤5ea/wafer (2mm>D>0.5mm)	Thickness	500±25μm

Advantages of semi-insulating SiC composite substrates include:

High resistivity: semi-insulating SiC materials have a high resistivity, making them somewhat capable of blocking current flow and suitable for specific types of electronic devices.

High-temperature performance: SiC materials are capable of operating in high-temperature environments, making them suitable for high-power and high-frequency electronic applications.

High Breakdown Voltage: SiC materials have a high breakdown voltage and are able to withstand high electric fields without electrical breakdown.

Chemical and Environmental Resistance: SiC is resistant to chemical corrosion and can withstand harsh environmental conditions for demanding applications.

Reduced power loss: SiC substrates allow for more efficient power conversion and lower power loss in electronics compared to traditional silicon-based materials.

Overall, semi-insulating SiC composite substrates offer significant advantages in the development of high-performance electronics, especially in applications requiring high-temperature operation, high power density and efficient power conversion.

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