SiC
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4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um thickness
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4H-N/6H-N SiC Wafer Reasearch production Dummy grade Dia150mm Silicon carbide substrate
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8inch 200mm Silicon Carbide SiC Wafers 4H-N type Production grade 500um thickness
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8 inch SiC silicon carbide wafer 4H-N type 0.5mm production grade research grade custom polished substrate
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HPSI SiC wafer dia:3inch thickness:350um± 25 µm for Power Electronics
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3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch new product
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C type 2inch 3inch 4inch 6inch 8inch
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2 inch Sic silicon carbide substrate 6H-N Type 0.33mm 0.43mm double-sided polishing High thermal conductivity low power consumption
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SiC substrate 3inch 350um thickness HPSI type Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade thickness can ba customized