SiC
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4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um thickness
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4H-N/6H-N SiC Wafer Reasearch production Dummy grade Dia150mm Silicon carbide substrate
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8inch 200mm Silicon Carbide SiC Wafers 4H-N type Production grade 500um thickness
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HPSI SiC wafer dia:3inch thickness:350um± 25 µm for Power Electronics
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3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch new product
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade thickness can ba customized
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Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Thickness
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2inch silicon carbide substrate 6H-N double-sided polished diameter 50.8mm production grade research grade
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N-Type SiC Composite Substrates Dia6inch High quality monocrystaline and low quality substrate