SiC Ingot 4H-N type Dummy grade 2inch 3inch 4inch 6inch thickness:＞10mm

Short Description:

The 4H-N Type SiC Ingot (Dummy Grade) is a premium material used in the development and testing of advanced semiconductor devices. With its robust electrical, thermal, and mechanical properties, it is ideal for high-power and high-temperature applications. This material is highly suitable for research and development in power electronics, automotive systems, and industrial equipment. Available in various sizes, including 2-inch, 3-inch, 4-inch, and 6-inch diameters, this ingot is designed to meet the rigorous demands of the semiconductor industry while offering excellent performance and reliability.

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Product Detail

Product Tags

Application

Power Electronics: Used in the production of high-efficiency power transistors, diodes, and rectifiers for industrial and automotive applications.

Electric Vehicles (EV): Utilized in the manufacturing of power modules for electric drive systems, inverters, and chargers.

Renewable Energy Systems: Essential for the development of efficient power conversion devices for solar, wind, and energy storage systems.

Aerospace and Defense: Applied in high-frequency and high-power components, including radar systems and satellite communications.

Industrial Control Systems: Supports advanced sensors and control devices in demanding environments.

Properties

conductivity.
Diameter Options: 2-inch, 3-inch, 4-inch, and 6-inch.
Thickness: >10mm, ensuring substantial material for wafer slicing and processing.
Type: Dummy Grade, primarily used for non-device testing and development.
Carrier Type: N-type, optimizing the material for high-performance power devices.
Thermal Conductivity: Excellent, ideal for efficient heat dissipation in power electronics.
Resistivity: Low resistivity, enhancing the conductivity and efficiency of devices.
Mechanical Strength: High, ensuring durability and stability under stress and high temperature.
Optical Properties: Transparent in the UV-visible range, making it suitable for optical sensor applications.
Defect Density: Low, contributing to the high quality of fabricated devices.
SiC ingot specification
Grade: Produetion;
Size: 6inch;
Diameter: 150.25mm +0.25:
Thickness: >10mm;
Surface Orientation:4°toward<11-20>+0.2°:
Primary flat orientation: <1-100>+5°:
Primary flat length:47.5mm+1.5 ;
Resistivity: 0.015-0.02852:
Micropipe: <0.5;
BPD: <2000;
TSD: <500;
Polytype areas : None;
Fdge indents :<3,:lmm width and depth;
Edge Qracks: 3,<lmm/ea;
Packing: Wafer case;
For bulk orders or specific customizations, pricing may vary. Please reach out to our sales department for a tailored quote based on your requirements and quantities.