SiC Ingot 4H type Dia 4inch 6inch Thickness 5-10mm Research / Dummy Grade

Short Description:

Silicon Carbide (SiC) has emerged as a key material in advanced electronic and optoelectronic applications due to its superior electrical, thermal, and mechanical properties. The 4H-SiC Ingot, available in diameters of 4-inch and 6-inch with a thickness of 5-10 mm, is a foundational product for research and development purposes or as a dummy-grade material. This ingot is designed to provide researchers and manufacturers with high-quality SiC substrates suitable for prototype device fabrication, experimental studies, or calibration and testing procedures. With its unique hexagonal crystal structure, the 4H-SiC ingot offers wide applicability in power electronics, high-frequency devices, and radiation-resistant systems.

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Properties

1. Crystal Structure and Orientation
Polytype: 4H (hexagonal structure)
Lattice Constants:
a = 3.073 Å
c = 10.053 Å
Orientation: Typically [0001] (C-plane), but other orientations such as [11\overline{2}0] (A-plane) are also available upon request.

2. Physical Dimensions
Diameter:
Standard options: 4 inches (100 mm) and 6 inches (150 mm)
Thickness:
Available in the range of 5-10 mm, customizable depending on application requirements.

3. Electrical Properties
Doping Type: Available in intrinsic (semi-insulating), n-type (doped with nitrogen), or p-type (doped with aluminum or boron).

4. Thermal and Mechanical Properties
Thermal Conductivity: 3.5-4.9 W/cm·K at room temperature, enabling excellent heat dissipation.
Hardness: Mohs scale 9, making SiC second only to diamond in hardness.

Parameter	Details	Unit
Growth Method	PVT (Physical Vapor Transport)
Diameter	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Polytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Surface Orientation	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (others)	degree
Type	N-type
Thickness	5-10 / 10-15 / >15	mm
Primary Flat Orientation	(10-10) ± 5.0˚	degree
Primary Flat Length	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Secondary Flat Orientation	90˚ CCW from orientation ± 5.0˚	degree
Secondary Flat Length	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), None (150 mm)	mm
Grade	Research / Dummy

Applications

1. Research and Development

The research-grade 4H-SiC ingot is ideal for academic and industrial labs focused on SiC-based device development. Its superior crystalline quality enables precise experimentation on SiC properties, such as:
Carrier mobility studies.
Defect characterization and minimization techniques.
Optimization of epitaxial growth processes.

2. Dummy Substrate
The dummy-grade ingot is widely used in testing, calibration, and prototyping applications. It is a cost-effective alternative for:
Process parameter calibration in Chemical Vapor Deposition (CVD) or Physical Vapor Deposition (PVD).
Evaluating etching and polishing processes in manufacturing environments.

3. Power Electronics
Due to its wide bandgap and high thermal conductivity, 4H-SiC is a cornerstone for power electronics, such as:
High-voltage MOSFETs.
Schottky Barrier Diodes (SBDs).
Junction Field-Effect Transistors (JFETs).
Applications include electric vehicle inverters, solar inverters, and smart grids.

4. High-Frequency Devices
The material's high electron mobility and low capacitance losses make it suitable for:
Radio Frequency (RF) transistors.
Wireless communication systems, including 5G infrastructure.
Aerospace and defense applications requiring radar systems.

5. Radiation-Resistant Systems
4H-SiC’s inherent resistance to radiation damage makes it indispensable in harsh environments such as:
Space exploration hardware.
Nuclear power plant monitoring equipment.
Military-grade electronics.

6. Emerging Technologies
As SiC technology advances, its applications continue to grow into fields such as:
Photonics and quantum computing research.
Development of high-power LEDs and UV sensors.
Integration into wide-bandgap semiconductor heterostructures.
Advantages of 4H-SiC Ingot
High Purity: Manufactured under stringent conditions to minimize impurities and defect density.
Scalability: Available in both 4-inch and 6-inch diameters to support industry-standard and research-scale needs.
Versatility: Adaptable to various doping types and orientations to meet specific application requirements.
Robust Performance: Superior thermal and mechanical stability under extreme operating conditions.

Conclusion

The 4H-SiC ingot, with its exceptional properties and wide-ranging applications, stands at the forefront of materials innovation for next-generation electronics and optoelectronics. Whether used for academic research, industrial prototyping, or advanced device manufacturing, these ingots provide a reliable platform for pushing the boundaries of technology. With customizable dimensions, doping, and orientations, the 4H-SiC ingot is tailored to meet the evolving demands of the semiconductor industry.
If you are interested in learning more or placing an order, please feel free to reach out for detailed specifications and technical consultation.