SiC substrate 3inch 350um thickness HPSI type Prime Grade Dummy grade

Short Description:

The 3-inch High Purity Silicon Carbide (SiC) wafers are specifically engineered for demanding applications in power electronics, optoelectronics, and advanced research. Available in Production, Research, and Dummy Grades, these wafers deliver exceptional resistivity, low defect density, and superior surface quality. With undoped semi-insulating properties, they provide the ideal platform for fabricating high-performance devices operating under extreme thermal and electrical conditions.

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Product Detail

Product Tags

Properties

Parameter	Production Grade	Research Grade	Dummy Grade	Unit
Grade	Production Grade	Research Grade	Dummy Grade
Diameter	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Thickness	500 ± 25	500 ± 25	500 ± 25	µm
Wafer Orientation	On-axis: <0001> ± 0.5°	On-axis: <0001> ± 2.0°	On-axis: <0001> ± 2.0°	degree
Micropipe Density (MPD)	≤ 1	≤ 5	≤ 10	cm−2^-2−2
Electrical Resistivity	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
Dopant	Undoped	Undoped	Undoped
Primary Flat Orientation	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	degree
Primary Flat Length	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Secondary Flat Length	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Secondary Flat Orientation	90° CW from primary flat ± 5.0°	90° CW from primary flat ± 5.0°	90° CW from primary flat ± 5.0°	degree
Edge Exclusion	3	3	3	mm
LTV/TTV/Bow/Warp	3 / 10 / ±30 / 40	3 / 10 / ±30 / 40	5 / 15 / ±40 / 45	µm
Surface Roughness	Si-face: CMP, C-face: Polished	Si-face: CMP, C-face: Polished	Si-face: CMP, C-face: Polished
Cracks (High-Intensity Light)	None	None	None
Hex Plates (High-Intensity Light)	None	None	Cumulative area 10%	%
Polytype Areas (High-Intensity Light)	Cumulative area 5%	Cumulative area 20%	Cumulative area 30%	%
Scratches (High-Intensity Light)	≤ 5 scratches, cumulative length ≤ 150	≤ 10 scratches, cumulative length ≤ 200	≤ 10 scratches, cumulative length ≤ 200	mm
Edge Chipping	None ≥ 0.5 mm width/depth	2 allowed ≤ 1 mm width/depth	5 allowed ≤ 5 mm width/depth	mm
Surface Contamination	None	None	None

Applications

1. High-Power Electronics
The superior thermal conductivity and wide bandgap of SiC wafers make them ideal for high-power, high-frequency devices:
●MOSFETs and IGBTs for power conversion.
●Advanced electric vehicle power systems, including inverters and chargers.
●Smart grid infrastructure and renewable energy systems.
2. RF and Microwave Systems
SiC substrates enable high-frequency RF and microwave applications with minimal signal loss:
●Telecommunications and satellite systems.
●Aerospace radar systems.
●Advanced 5G network components.
3. Optoelectronics and Sensors
The unique properties of SiC support a variety of optoelectronic applications:
●UV detectors for environmental monitoring and industrial sensing.
●LED and laser substrates for solid-state lighting and precision instruments.
●High-temperature sensors for aerospace and automotive industries.
4. Research and Development
The diversity of grades (Production, Research, Dummy) enables cutting-edge experimentation and device prototyping in academia and industry.

Advantages

●Reliability: Excellent resistivity and stability across grades.
●Customization: Tailored orientations and thicknesses to suit different needs.
●High Purity: Undoped composition ensures minimal impurity-related variations.
●Scalability: Meets the requirements of both mass production and experimental research.
The 3-inch high-purity SiC wafers are your gateway to high-performance devices and innovative technological advancements. For inquiries and detailed specifications, contact us today.

Summary

The 3-inch High Purity Silicon Carbide (SiC) Wafers, available in Production, Research, and Dummy Grades, are premium substrates designed for high-power electronics, RF/microwave systems, optoelectronics, and advanced R&D. These wafers feature undoped, semi-insulating properties with excellent resistivity (≥1E10 Ω·cm for Production Grade), low micropipe density (≤1 cm−2^-2−2), and exceptional surface quality. They are optimized for high-performance applications, including power conversion, telecommunications, UV sensing, and LED technologies. With customizable orientations, superior thermal conductivity, and robust mechanical properties, these SiC wafers enable efficient, reliable device fabrication and groundbreaking innovations across industries.