SiC substrate P and D grade Dia50mm 4H-N 2inch
The main features of 2inch SiC mosfet wafers are as follows;.
High Thermal Conductivity: Ensures efficient thermal management,enhancing device reliability and performance
High Electron Mobility: Enables high-speed electronic switching,suitable for high-frequency applications
Chemical Stability: Maintains performance under extreme conditions device lifespan
Compatibility: Compatible with existing semiconductor integration and mass production
2inch, 3inch, 4inch, 6inch, 8inch SiC mosfet wafers are widely used in the following areas: power modules for electric vehicles,providing stable and efficient energy systems,inverters foe renewable energy systems, optimizing energy management and conversion efficiency,
SiC wafer and Epi-layer wafer for satellite and aerospace electronics, ensuring reliable high-frequency communication.
Optoelectronic applications for high-performance lasers and LEDs, meeting the demands of advanced lighting and display technologies.
Our SiC wafers SiC substrates are the ideal choice for power electronics and RF devices, especially where high reliability and exceptional performance are required. Each batch of wafers undergoes rigorous testing to ensure they meet the highest quality standards.
Our 2inch, 3inch, 4inch, 6inch, 8inch 4H-N type D-grade and P-grade SiC wafers are the perfect choice for high-performance semiconductor applications. With exceptional crystal quality, strict quality control, customization services, and a wide range of applications, we can also arrange customization according to your needs. Inquiries are welcome!