SiC substrate P-type 4H/6H-P 3C-N 4inch withe thickness of 350um Production grade Dummy grade

Short Description:

The P-type 4H/6H-P 3C-N 4-inch SiC substrate, with a thickness of 350 μm, is a high-performance semiconductor material widely used in electronic device manufacturing. Known for its exceptional thermal conductivity, high breakdown voltage, and resistance to extreme temperatures and corrosive environments, this substrate is ideal for power electronics applications. The production-grade substrate is used in large-scale manufacturing, ensuring strict quality control and high reliability in advanced electronic devices. Meanwhile, the dummy-grade substrate is primarily utilized for process debugging, equipment calibration, and prototyping. The superior properties of SiC make it an excellent choice for devices operating in high-temperature, high-voltage, and high-frequency environments, including power devices and RF systems.

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4inch SiC substrate P-type 4H/6H-P 3C-N parameter table

4 inch diameter Silicon Carbide (SiC) Substrate Specification

Grade			Zero MPD Production Grade (Z Grade)	Standard Production Grade (P Grade)	Dummy Grade (D Grade)
Diameter			99.5 mm~100.0 mm
Thickness			350 μm ± 25 μm
Wafer Orientation			Off axis: 2.0°-4.0°toward [112(-)0] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N
Micropipe Density			0 cm-2
Resistivity	p-type 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-type 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Primary Flat Orientation		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Primary Flat Length			32.5 mm ± 2.0 mm
Secondary Flat Length			18.0 mm ± 2.0 mm
Secondary Flat Orientation			Silicon face up: 90° CW. from Prime flat ± 5.0°
Edge Exclusion			3 mm		6 mm
LTV/TTV/Bow /Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Roughness			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Edge Cracks By High Intensity Light			None		Cumulative length ≤ 10 mm, single length≤2 mm
Hex Plates By High Intensity Light			Cumulative area ≤0.05%		Cumulative area ≤0.1%
Polytype Areas By High Intensity Light			None		Cumulative area≤3%
Visual Carbon Inclusions			Cumulative area ≤0.05%		Cumulative area ≤3%
Silicon Surface Scratches By High Intensity Light			None		Cumulative length≤1×wafer diameter
Edge Chips High By Intensity Light			None permitted ≥0.2mm width and depth		5 allowed, ≤1 mm each
Silicon Surface Contamination By High Intensity			None
Packaging			Multi-wafer Cassette or Single Wafer Container

Notes:

※Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

The P-type 4H/6H-P 3C-N 4-inch SiC substrate with a thickness of 350 μm is widely applied in advanced electronic and power device manufacturing. With excellent thermal conductivity, high breakdown voltage, and strong resistance to extreme environments, this substrate is ideal for high-performance power electronics such as high-voltage switches, inverters, and RF devices. Production-grade substrates are used in large-scale manufacturing, ensuring reliable, high-precision device performance, which is critical for power electronics and high-frequency applications. Dummy-grade substrates, on the other hand, are mainly used for process calibration, equipment testing, and prototype development, helping maintain quality control and process consistency in semiconductor production.

SpecificationThe advantages of N-type SiC composite substrates include

High Thermal Conductivity: Efficient heat dissipation makes the substrate ideal for high-temperature and high-power applications.
High Breakdown Voltage: Supports high-voltage operation, ensuring reliability in power electronics and RF devices.
Resistance to Harsh Environments: Durable in extreme conditions such as high temperatures and corrosive environments, ensuring long-lasting performance.
Production-Grade Precision: Ensures high-quality and reliable performance in large-scale manufacturing, suitable for advanced power and RF applications.
Dummy-Grade for Testing: Enables accurate process calibration, equipment testing, and prototyping without compromising production-grade wafers.

Overall, the P-type 4H/6H-P 3C-N 4-inch SiC substrate with a thickness of 350 μm offers significant advantages for high-performance electronic applications. Its high thermal conductivity and breakdown voltage make it ideal for high-power and high-temperature environments, while its resistance to harsh conditions ensures durability and reliability. The production-grade substrate ensures precise and consistent performance in large-scale manufacturing of power electronics and RF devices. Meanwhile, the dummy-grade substrate is essential for process calibration, equipment testing, and prototyping, supporting quality control and consistency in semiconductor production. These features make SiC substrates highly versatile for advanced applications.