Silicon carbide diamond wire cutting machine 4/6/8/12 inch SiC ingot processing

Short Description:

Silicon carbide Diamond Wire cutting machine is a kind of high-precision processing equipment dedicated to silicon carbide (SiC) ingot slice, using Diamond Wire Saw technology, through high-speed moving diamond wire (line diameter 0.1~0.3mm) to SiC ingot multi-wire cutting, to achieve high-precision, low-damage wafer preparation. The equipment is widely used in SiC power semiconductor (MOSFET/SBD), radio frequency device (GaN-on-SiC) and optoelectronic device substrate processing, is a key equipment in the SiC industry chain.

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Working principle：

1. Ingot fixation: SiC ingot (4H/6H-SiC) is fixed on the cutting platform through the fixture to ensure the position accuracy (±0.02mm).

2. Diamond line movement: diamond line (electroplated diamond particles on the surface) is driven by the guide wheel system for high-speed circulation (line speed 10~30m/s).

3. Cutting feed: the ingot is fed along the set direction, and the diamond line is cut simultaneously with multiple parallel lines (100~500 lines) to form multiple wafers.

4. Cooling and chip removal: Spray coolant (deionized water + additives) in the cutting area to reduce heat damage and remove chips.

Key parameters:

1. Cutting speed: 0.2~1.0mm/min (depending on the crystal direction and thickness of SiC).

2. Line tension: 20~50N (too high easy to break line, too low affect cutting accuracy).

3.Wafer thickness: standard 350~500μm, wafer can reach 100μm.

Main features:

(1) Cutting accuracy
Thickness tolerance: ±5μm (@350μm wafer), better than conventional mortar cutting (±20μm).

Surface roughness: Ra<0.5μm (no additional grinding required to reduce the amount of subsequent processing).

Warpage: <10μm (reduce the difficulty of subsequent polishing).

(2) Processing efficiency
Multi-line cutting: cutting 100~500 pieces at a time, increasing production capacity 3~5 times (vs. Single line cut).

Line life: The diamond line can cut 100~300km SiC (depending on the ingot hardness and process optimization).

(3) Low damage processing
Edge breakage: <15μm (traditional cutting >50μm), improve the wafer yield.

Subsurface damage layer: <5μm (reduce polishing removal).

(4) Environmental protection and economy
No mortar contamination: Reduced waste liquid disposal costs compared to mortar cutting.

Material utilization: Cutting loss <100μm/ cutter, saving SiC raw materials.

Cutting effect:

1. Wafer quality: no macroscopic cracks on the surface, few microscopic defects (controllable dislocation extension). Can directly enter the rough polishing link, shorten the process flow.

2. Consistency: the thickness deviation of the wafer in the batch is <±3%, suitable for automated production.

3.Applicability: Support 4H/6H-SiC ingot cutting, compatible with conductive/semi-insulated type.

Technical specification：

Specification	Details
Dimensions (L × W × H)	2500x2300x2500 or customize
Processing material size range	4, 6, 8, 10, 12 inches of silicon carbide
Surface roughness	Ra≤0.3u
Average cutting speed	0.3mm/min
Weight	5.5t
Cutting process setting steps	≤30 steps
Equipment noise	≤80 dB
Steel wire tension	0~110N(0.25 wire tension is 45N)
Steel wire speed	0~30m/S
Total power	50kw
Diamond wire diameter	≥0.18mm
End flatness	≤0.05mm
Cutting and breaking rate	≤1%(except for human reasons, silicon material, line, maintenance and other reasons)

XKH Services:

XKH provides the whole process service of silicon carbide diamond wire cutting machine, including equipment selection (wire diameter/wire speed matching), process development (cutting parameter optimization), consumables supply (diamond wire, guide wheel) and after-sales support (equipment maintenance, cutting quality analysis), to help customers achieve high yield (>95%), low cost SiC wafer mass production. It also offers customized upgrades (such as ultra-thin cutting, automated loading and unloading) with a 4-8 week lead time.