Substrate
-
SiC substrate P-type 4H/6H-P 3C-N 4inch withe thickness of 350um Production grade Dummy grade
-
4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
-
P-type SiC wafer 4H/6H-P 3C-N 6inch thickeness 350 μm with Primary Flat Orientation
-
TVG process on quartz sapphire BF33 wafer Glass wafer punching
-
Single Crystal Silicon Wafer Si Substrate Type N/P Optional Silicon Carbide Wafer
-
N-Type SiC Composite Substrates Dia6inch High quality monocrystaline and low quality substrate
-
Semi-Insulating SiC on Si Composite Substrates
-
Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
-
Synthetic Sapphire boule Monocrystal Sapphire Blank Diameter and thickness can be customized
-
N-Type SiC on Si Composite Substrates Dia6inch
-
SiC substrate Dia200mm 4H-N and HPSI Silicon carbide
-
3inch SiC substrate Production Dia76.2mm 4H-N